BFP 182W E6327 Infineon Technologies, BFP 182W E6327 Datasheet - Page 2
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BFP 182W E6327
Manufacturer Part Number
BFP 182W E6327
Description
TRANSISTOR NPN RF 12V SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BFP_182W_E6327.pdf
(7 pages)
Specifications of BFP 182W E6327
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain
22dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 8V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
8 GHz
Collector- Emitter Voltage Vceo Max
12 V
Continuous Collector Current
0.035 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 182W E6327
BFP182WE6327INTR
BFP182WE6327XT
SP000011017
BFP182WE6327INTR
BFP182WE6327XT
SP000011017
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 10 mA, V
= 1 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
Values
typ.
100
-
-
-
-
max.
2007-04-20
100
100
140
BFP182W
1
-
Unit
V
µA
nA
µA
-