BFR 705L3RH E6327 Infineon Technologies, BFR 705L3RH E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 705L3RH E6327
• Description: TRANS RF BIPO NPN 10MA TSLP-3-9
• Manufacturer: Infineon Technologies

Specifications of BFR 705L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 39GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 25dB
• Power - Max: 40mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 7mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR705L3RHE6327INTR; BFR705L3RHE6327XT; SP000252590

Total power dissipation P
Permissible Pulse Load
P
totmax
10
10
10
50
45
40
35
30
25
20
15
10
5
0
2
1
0
10
0
−8
/P
15
totDC
30
10
−6
=
45
(t
60
t
p
p
T
)
T
tp [s]
S
10
75
[°C]
−4
D=t
p
90
/T
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
tot
105
=
10
−2
120
(T
S
135
)
150
10
0
4
Permissible Puls Load R
Collector-base capacitance C
f = 1 MHz
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
10
10
0.1
2
1
10
0
0
−8
2
10
−6
4
t
p
T
V
tp [s]
10
CB
6
−4
[V]
D=t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0
p
thJS
/T
BFR705L3RH
8
=
10
cb
2007-03-30
−2
=
(t
10
p
)
(V
10
CB
12
0
)