BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet - Page 4

TRANSISTOR RF NPN 30MA SOT-343

BFP 740 E6327

Manufacturer Part Number
BFP 740 E6327
Description
TRANSISTOR RF NPN 30MA SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 740 E6327

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.7V
Frequency - Transition
42GHz
Noise Figure (db Typ @ F)
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain
27dB
Power - Max
160mW
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 25mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
160 @ 25mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
42000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4 V
Emitter- Base Voltage Vebo
1.2 V
Continuous Collector Current
0.03 A
Power Dissipation
160 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 740 E6327
BFP740E6327INTR
BFP740E6327XT
SP000016424
BFP740
Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website:
www.infineon.com/rf.models.
Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 12 GHz using typical
devices. The BFP740 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
2009-12-04
4

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