BFR 740L3RH E6327 Infineon Technologies, BFR 740L3RH E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 740L3RH E6327
• Description: TRANS RF BIPO NPN 30MA TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 740L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 24.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR740L3RHE6327INTR; BFR740L3RHE6327XT; SP000252393

Total power dissipation P
Permissible Pulse Load
P
totmax
180
160
140
120
100
10
10
10
80
60
40
20
0
2
1
0
10
0
−7
/P
15
totDC
10
−6
30
= ƒ (t
10
45
−5
→ t
←
60
p
p
10
T
)
−4
←
T
tp [s]
S
75
→
[°C]
D=t
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
10
−3
p
90
/T
tot
105
10
= ƒ (T
−2
120
10
−1
S
135
)
150
10
0
4
Permissible Puls Load R
Collector-base capacitance C
f = 1 MHz
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
10
10
0.2
0.1
2
1
0
10
0
−7
10
−6
2
10
−5
4
→ t
←
p
10
T
−4
←
V
tp [s]
CB
→
6
[V]
D=t
10
−3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0
p
thJS
/T
BFR740L3RH
8
10
= ƒ (t
−2
cb
2010-09-08
= ƒ (V
10
10
−1
p
)
10
CB
12
0
)