MMBTH11 Fairchild Semiconductor, MMBTH11 Datasheet - Page 8
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MMBTH11
Manufacturer Part Number
MMBTH11
Description
TRANSISTOR RF NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH11.pdf
(8 pages)
Specifications of MMBTH11
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTH11LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Device #13 FSA1156P6X
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
GATE+
GATE-
HAST2
HTSL
SOPL1
TMCL1
Device #14 FSA66M5
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
GATE+
GATE-
HAST2
HTSL
SOPL1
TMCL1
Device #15 KST42MTF
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HTRB
HTSL
P/C
X
X
P/C
X
X
P/C
006
006
006
P/C
P/C
P/C
Standard
AEC-Q100-006 155C, 400V
AEC-Q100-006 155C, -400V
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 5V
JESD22-A104 -65C, 150C
Standard
AEC-Q100-006 155C, 400V
AEC-Q100-006 155C, -400V
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A108 150C, 5V
JESD22-A104 -65C, 150C
Standard
JESD22-A108 150C, 20V
JESD22-A103 150C
Standard
JESD22-A113
Standard
JESD22-A113
Standard
JESD22-A113
Conditions
0V
Conditions
0V
Conditions
Conditions
Conditions
Conditions
Readpoints
TP1
1
1
264
168
168
100
Readpoints
TP1
1
1
264
168
168
100
Readpoints
TP1
168
168
TP2
500
500
500
TP2
500
500
500
TP2
500
500
TP3
1000
1000
TP3
1000
1000
TP3
1000
1000
Read-
points
Read-
points
Read-
points
Samples
A
3
3
45
77
77
77
Samples
A
3
3
45
77
77
77
Samples
A
77
77
Sample
Sample
Sample
A
0
A
A
0
0
B
77
77
B
0
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