MMBTH10 Fairchild Semiconductor, MMBTH10 Datasheet - Page 2

• Manufacturer Part Number: MMBTH10
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTH10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 60
• Frequency (max): 650MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTH10FSTR

C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
rb’C
Symbol
CBO
EBO
T
FE
rb
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
on
sat
c
)
)
Common-Base Feedback Capacitance V
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Collector Base Time Constant
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
f = 100 MHz
V
I
f = 31.8 MHz
C
C
E
C
C
C
C
C
CB
CB
EB
CB
= 1.0 mA, I
= 100 A, I
= 10 A, I
= 4.0 mA, V
= 4.0 mA, I
= 4.0 mA, V
= 4.0 mA, V
= 4.0 mA, V
= 10 V, I
= 25 V, I
= 2.0 V, I
= 10 V, I
Test Conditions
C
E
E
E
B
C
B
E
= 0
= 0, f = 1.0 MHz
CE
CE
CE
CB
= 0, f = 1.0 MHz
= 0
= 0
= 0.4 mA
= 0
= 0
= 10 V
= 10 V
= 10 V,
= 10 V,
Min
0.35
NPN RF Transistor
650
3.0
25
30
60
Max
0.95
0.65
100
100
0.7
0.5
9.0
(continued)
Units
MHz
nA
nA
pF
pF
pS
V
V
V
V
V
3