MMBTH24 Fairchild Semiconductor, MMBTH24 Datasheet

MMBTH24

Manufacturer Part Number

MMBTH24

Description

TRANSISTOR RF NPN SOT-23

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBTH24.pdf (4 pages)

Specifications of MMBTH24

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

30V

Frequency - Transition

400MHz

Power - Max

225mW

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 8mA, 10V

Current - Collector (ic) (max)

50mA

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Noise Figure (db Typ @ F)

Other names

MMBTH24FS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MMBTH24

Manufacturer:

Quantity:

7 167

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NPN General Purpose Amplifier

• This device is designed for common-emitter low noise

• Sourced from process 47.

• See MPSH11 for characteristics.

Absolute Maximum Ratings

Electrical Characteristics

* Pulse Test: Pulse Width

Thermal Characteristics

* Device mounted on FR-4 PCB 1.6”

Off Characteristics

On Characteristics

Small Signal Characteristics

CBO

amplifier and mixer applications with collector currents

in the 100mA to 20mA range to 300MHz, and low

frequency drift common-base VHF oscillator

applications with high output levels for driving FET

mixers.

CEO

CBO

EBO

(BR)CEO

(BR)CBO

(BR)EBO

Symbol

, T

Symbol

stg

Collector-Emitter Sustaining Voltage *

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Current Gain Bandwidth Product

Collector-Base Capacitance

Total Device Dissipation

Derate above 25 C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current

Junction and Storage Temperature

300 s, Duty Cycle

1.6”

Parameter

0.06"

2.0%

Parameter

MPSH24/MMBTH24

=25 C unless otherwise noted

Parameter

=25 C unless otherwise noted

- Continuous

f = 100MHz

1. Base 2. Emitter 3. Collector

= 1.0mA, I

= 100 A, I

= 10 A, I

= 8.0mA, V

= 15V, I

= 10V, I

Test Condition

= 0

= 0, f = 1.0MHz

= 0

= 10V

= 10V,

MPSH24

TO-92

83.3

625

200

5.0

Max.

-55 ~ +150

1. Base 2. Emitter 3. Collector

Min.

400

4.0

*MMBTH24

Value

4.0

225

556

1.8

Typ.

SOT-23

Mark: 3A

Max.

0.36

Rev. C, November 2002

mW/ C

Units

C/W

Units

MHz

Related parts for MMBTH24

MMBTH24 Summary of contents

Page 1

... C unless otherwise noted A Parameter 3 2 SOT-23 TO-92 1 Mark Base 2. Emitter 3. Collector Value Units 30 40 4.0 50 -55 ~ +150 Min. Typ. Max 4 10V 30 = 10V, 400 0.36 Max. Units MPSH24 *MMBTH24 625 225 mW 5.0 1.8 mW/ C 83.3 C/W 200 556 C/W Rev. C, November 2002 Units MHz pF ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. C, November 2002 ...

Page 3

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation (Continued) SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. C, November 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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