PN918 Fairchild Semiconductor, PN918 Datasheet - Page 5
![TRANSISTOR RF NPN 15V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
PN918
Manufacturer Part Number
PN918
Description
TRANSISTOR RF NPN 15V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT918.pdf
(15 pages)
Specifications of PN918
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
6dB @ 60MHz
Gain
15dB
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 3mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
600 MHz (Min)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.05 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 @ 3 mA @ 1 V
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PN918
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Common Emitter Y Parameters vs. Frequency
Forward Trans. Admittance vs Collector
25
20
15
10
120
100
1.6
1.2
0.8
0.4
5
0
80
60
40
20
10
2
0
0
Frequency-Output Short Circuit
0
0
I = 5.0 mA
V = 10V
Input Admittance vs Collector
c
CE
Current-Output Short Circuit
f = 10.7 MHz
V = 10V
Current-Output Short Circuit
f = 10.7 MHz
V = 10V
CE
CE
20
Input Admittance vs
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
2
2
f - FREQUENCY (MHz)
g
50
ie
4
4
100
g
fe
b
ie
6
6
-b
200
fe
8
g
8
500
ie
b
ie
1000
10
10
Forward Trans. Admittance vs Collector
100
10
80
60
40
20
100
8
6
4
2
0
0
Forward Transfer Admittance vs
80
60
40
20
Frequency-Output Open Circuit
10
0
0
0
Input Admittance vs Collector
Current-Output Short Circuit
Current-Output Short Circuit
g
-b
fe
20
V
I - COLLECTOR CURRENT (mA)
fe
CE
C
I - COLLECTOR CURRENT (mA)
2
C
2
= 5V
f - FREQUENCY (MHz)
V = 5.0V
CE
50
V
V = 10V
CE
4
CE
4
= 5V
NPN RF Transistor
100
V = 10V
CE
6
6
200
f = 100 MHz
V = 10V
f = 100 MHz
I = 5.0 mA
V = 10V
g
V = 5.0V
c
V = 10V
CE
CE
CE
CE
8
fe
8
500
(continued)
-b
fe
1000
10
10