MMBTH10RG Fairchild Semiconductor, MMBTH10RG Datasheet
MMBTH10RG
Manufacturer Part Number
MMBTH10RG
Description
TRANSISTOR RF NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH10RG.pdf
(3 pages)
Specifications of MMBTH10RG
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
40V
Frequency - Transition
450MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 1mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
450 MHz (Min)
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 @ 1mA @ 6V
Dc Current Gain Hfe Max
120
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
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©2004 Fairchild Semiconductor Corporation
NPN RF Transistor
• This device is designed for use in low noise UHF/VHF amplifiers, with
• Sourced from process 42.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics
h
V
Small Signal Characteristics
f
C
rb’Cc
P
R
C
CBO
T
collector currents in the 100 A to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
Symbol
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
D
cb
Symbol
, T
JA
Symbol
STG
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Collector Base Time Constant
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
MMBTH10RG
T
a
=25 C unless otherwise noted
- Continuous
I
I
I
V
I
I
I
f = 100 MHz
V
I
f = 79.8 MHz
C
C
E
C
C
C
C
CB
CB
= 1.0 A, I
= 1.0 mA, I
= 10 A, I
= 1.0 mA, V
= 10 mA, I
= 2.0 mA, V
= 5.0 mA, V
= 30 V, I
= 10 V, I
Test Condition
E
C
E
B
E
B
= 0
CE
CE
CB
= 0
= 5.0 mA
= 0, f = 1.0 MHz
= 0
= 0
= 6.0 V
= 10 V,
= 10 V,
Max.
225
556
1.8
1. Base 2. Emitter 3. Collector
-55 ~ 150
Ratings
C
4.0
40
40
50
Min.
450
4.0
40
40
50
B
Max.
100
120
0.2
0.6
12
SOT-23
Mark: 3E
mW/ C
Units
mW
C/W
Units
E
mA
Rev. A, April 2004
V
V
V
C
Units
MHz
nA
pF
pS
V
V
V
V
V
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MMBTH10RG Summary of contents
Page 1
... Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2004 Fairchild Semiconductor Corporation MMBTH10RG T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 1.0 mA, I ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, April 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...