BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 10

• Manufacturer Part Number: BFR505T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR505T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055891115; BFR505T T/R; BFR505T T/R

NXP Semiconductors
2000 May 17
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
Z
C
o
= 5 mA; V
= 50 .
CE
= 6 V;
180°
Fig.17 Common emitter output reflection coefficient (S
0
−135°
135°
0.2
0.2
0.2
0.5
0.5
0.5
−90°
10
90°
1
1
1
3 GHz
2
2
2
5
40 MHz
−45°
45°
5
5
MRC059
22
0°
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR505T