BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 4

• Manufacturer Part Number: BFR505T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR505T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055891115; BFR505T T/R; BFR505T T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
2000 May 17
I
h
C
C
C
f
G
S
F
P
ITO
j
SYMBOL
CBO
T
FE
= 25 C; unless otherwise specified.
L1
NPN 9 GHz wideband transistor
c
e
re
UM
21
f
C
(2p-q)
G

UM
2
= 5 mA; V
UM
is the maximum unilateral power gain, assuming S
= 898 MHz and at f
=
10 log
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third-order intercept point
CE
= 6 V; R
--------------------------------------------------------- - dB

1
PARAMETER
–
S
11
L
(2q-p)
= 50 ; f = 900 MHz; T
S
2
 1
21

2
= 904 MHz.
–
S
22
2

I
I
I
I
I
I
T
I
I
T

f = 900 MHz; T

f = 900 MHz; T

f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
E
C
C
C
C
C
C
amb
amb
s
s
s
f = 900 MHz
f = 2 GHz
= 0; V
= i
= 5 mA; V
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 
= 
= 
amb
e
c
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
= 25 C; f
C
C
C
CONDITIONS
4
= 6 V
= 6 V; f = 1 MHz
12
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
amb
CB
EB
CE
CE
CE
CE
CE
is zero and
amb
amb
amb
= 0.5 V; f = 1 MHz
= 6 V
= 6 V; f = 1 MHz
= 6 V; f = 1 GHz;
= 6 V; T
= 6 V; f = 900 MHz;
= 6 V; R
= 25 C
p
= 25 C
= 25 C
= 25 C
= 900 MHz; f
CE
amb
L
= 50 ;
= 6 V;
CE
CE
= 25 C;
= 6 V;
= 6 V;
q
= 902 MHz; measured at

60






13





MIN.

120
0.4
0.4
0.3
9
17
10
14
1.2
1.6
1.9
4
10
TYP.
Product specification
BFR505T
50
250







1.7
2.1



MAX.
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT