BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 8

• Manufacturer Part Number: BFR505T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR505T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055891115; BFR505T T/R; BFR505T T/R

NXP Semiconductors
2000 May 17
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 2 GHz; Z
I
Z
C
C
o
= 1.25 mA; V
= 5 mA; V
= 50 .
o
CE
= 50 .
= 6 V;
CE
= 6 V;
180°
180°
Fig.14 Common emitter input reflection coefficient (S
0
0
−135°
−135°
135°
135°
0.2
0.2
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
Fig.13 Noise circle.
0.5
0.5
3 GHz
−90°
−90°
90°
90°
8
1
1
1
1
1
1
F = 4 dB
F = 2.5 dB
F = 3 dB
F min = 1.9 dB
2
2
Γ OPT
2
2
2
2
40 MHz
5
5
−45°
−45°
45°
45°
5
5
5
5
MRC074
MRC056
11
).
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR505T