BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 7
![TRANS NPN 15V 9GHZ SOT-416](/photos/5/31/53190/568-emt3_sot-416_sc-75_sot416_sml.jpg)
BFR505T,115
Manufacturer Part Number
BFR505T,115
Description
TRANS NPN 15V 9GHZ SOT-416
Manufacturer
NXP Semiconductors
Datasheet
1.BFR505T115.pdf
(14 pages)
Specifications of BFR505T,115
Package / Case
EMT3 (SOT-416, SC-75-3)
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055891115
BFR505T T/R
BFR505T T/R
BFR505T T/R
BFR505T T/R
NXP Semiconductors
2000 May 17
handbook, halfpage
handbook, full pagewidth
NPN 9 GHz wideband transistor
V
Fig.10 Minimum noise figure as a function of
I
f = 900 MHz; Z
C
CE
(dB)
= 1.25 mA; V
F
= 6 V; T
4
3
2
1
0
10
−1
collector current.
amb
o
CE
f = 2 GHz
900 MHz
500 MHz
= 25 C.
= 50 .
= 6 V;
stability
circle
180°
1
0
−135°
I C (mA)
135°
0.2
0.2
pot. unst.
region
0.2
MRC018
0.5
0.5
10
Fig.12 Noise circle.
0.5
−90°
90°
7
1
1
1
handbook, halfpage
V
Fig.11 Minimum noise figure as a function of
CE
(dB)
F = 3 dB
F
2
= 6 V; T
F min = 1. 2 dB
F = 2 dB
4
3
2
1
0
10
F = 1.5 dB
Γ OPT
−1
frequency.
amb
2
2
5
= 25 C.
−45°
45°
5
5
MRC073
0°
1
1.0
0.8
0.6
0.4
0.2
0
1.0
I
C
1.25 mA
= 5 mA
Product specification
f (GHz)
BFR505T
MRC012
10