BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 7

• Manufacturer Part Number: BFR505T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR505T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055891115; BFR505T T/R; BFR505T T/R

NXP Semiconductors
2000 May 17
handbook, halfpage
handbook, full pagewidth
NPN 9 GHz wideband transistor
V
Fig.10 Minimum noise figure as a function of
I
f = 900 MHz; Z
C
CE
(dB)
= 1.25 mA; V
F
= 6 V; T
4
3
2
1
0
10
−1
collector current.
amb
o
CE
f = 2 GHz
900 MHz
500 MHz
= 25 C.
= 50 .
= 6 V;
stability
circle
180°
1
0
−135°
I C (mA)
135°
0.2
0.2
pot. unst.
region
0.2
MRC018
0.5
0.5
10
Fig.12 Noise circle.
0.5
−90°
90°
7
1
1
1
handbook, halfpage
V
Fig.11 Minimum noise figure as a function of
CE
(dB)
F = 3 dB
F
2
= 6 V; T
F min = 1. 2 dB
F = 2 dB
4
3
2
1
0
10
F = 1.5 dB
Γ OPT
−1
frequency.
amb
2
2
5
= 25 C.
−45°
45°
5
5
MRC073
0°
1
1.0
0.8
0.6
0.4
0.2
0
1.0
I
C
1.25 mA
= 5 mA
Product specification
f (GHz)
BFR505T
MRC012
10