BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 2
![TRANS NPN 15V 9GHZ SOT-416](/photos/5/31/53190/568-emt3_sot-416_sc-75_sot416_sml.jpg)
BFR505T,115
Manufacturer Part Number
BFR505T,115
Description
TRANS NPN 15V 9GHZ SOT-416
Manufacturer
NXP Semiconductors
Datasheet
1.BFR505T115.pdf
(14 pages)
Specifications of BFR505T,115
Package / Case
EMT3 (SOT-416, SC-75-3)
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 2.1dB @ 900MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055891115
BFR505T T/R
BFR505T T/R
BFR505T T/R
BFR505T T/R
NXP Semiconductors
FEATURES
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
SOT416 (SC-75) package.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 May 17
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
SYMBOL
C
FE
excellent reliability
stg
j
CBO
CES
tot
CBO
CE
EBO
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
1
2
3
open emitter
R
T
I
I
T
I
T
I
f = 900 MHz; T
open emitter
R
open collector
T
C
C
C
C
base
emitter
collector
s
amb
amb
s
BE
BE
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 1.25 mA; V
75 C; note 1
75 C; note 1
= 0
= 0
= 25 C
= 25 C
DESCRIPTION
2
CONDITIONS
CE
CE
CE
CONDITIONS
amb
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
CE
= 6 V;
= 25 C
j
= 25 C
lfpage
Marking code: N0.
60
MIN.
Top view
Fig.1 SOT416.
1
120
9
17
1.2
65
TYP.
MIN.
Product specification
3
BFR505T
20
15
18
150
250
1.7
20
15
2.5
18
150
+150
150
MAX.
MAX.
MBK090
2
V
V
mA
mW
GHz
dB
dB
V
V
V
mA
mW
C
C
UNIT
UNIT