BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 2

• Manufacturer Part Number: BFR505T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR505T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055891115; BFR505T T/R; BFR505T T/R

NXP Semiconductors
FEATURES
 Low current consumption
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
 SOT416 (SC-75) package.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 May 17
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
C
T
SYMBOL
C
FE
excellent reliability
stg
j
CBO
CES
tot
CBO
CE
EBO
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
1
2
3
open emitter
R
T
I
I
T
I
T
I
f = 900 MHz; T
open emitter
R
open collector
T
C
C
C
C
base
emitter
collector
s
amb
amb
s
BE
BE
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 1.25 mA; V
 75 C; note 1
 75 C; note 1
= 0
= 0
= 25 C
= 25 C
DESCRIPTION
2
CONDITIONS
CE
CE
CE
CONDITIONS
amb
= 6 V; f = 900 MHz;
= 6 V; T
= 6 V; f = 1 GHz;
CE
= 6 V;
= 25 C
j
= 25 C
lfpage
Marking code: N0.




60



MIN.
Top view
Fig.1 SOT416.
1




120
9
17
1.2





65

TYP.
MIN.
Product specification
3
BFR505T
20
15
18
150
250


1.7
20
15
2.5
18
150
+150
150
MAX.
MAX.
MBK090
2
V
V
mA
mW
GHz
dB
dB
V
V
V
mA
mW
C
C
UNIT
UNIT