BFR 93AW E6327 Infineon Technologies, BFR 93AW E6327 Datasheet

TRANSISTOR NPN RF 12V SOT-323

BFR 93AW E6327

Manufacturer Part Number
BFR 93AW E6327
Description
TRANSISTOR NPN RF 12V SOT-323
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 93AW E6327

Package / Case
SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain
10.5dB ~ 15.5dB
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
90mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR93AWE6327
BFR93AWE6327XT
SP000011071
NPN Silicon RF Transistor
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFR93AW
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
T
For calculation of R
S
For low distortion amplifiers and
Pb-free (RoHS compliant) package
Qualified according AEC Q101
oscillators up to 2 GHz at collector currents from
5 mA to 30 mA
S
is measured on the collector lead at the soldering point to the pcb
104 °C
thJA
please refer to Application Note AN077 Thermal Resistance
1)
2)
Marking
R2s
1=B
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
B
CEO
CES
CBO
EBO
tot
J
A
Stg
thJS
2=E
3=C
3
-65 ... 150
-65 ... 150
Value
Value
300
150
12
20
20
90
155
2
9
Package
SOT323
BFR93AW
2010-08-09
1
2
Unit
V
mA
mW
°C
Unit
K/W

Related parts for BFR 93AW E6327

BFR 93AW E6327 Summary of contents

Page 1

NPN Silicon RF Transistor For low distortion amplifiers and oscillators GHz at collector currents from Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD ( E lectro s tatic d ischarge) sensitive ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 1 ...

Page 5

SPICE Parameter For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. 5 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...

Page 7

Datasheet Revision History: 9 August 2010 This datasheet replaces the revision from 26 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 8

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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