BF 799W H6327 Infineon Technologies, BF 799W H6327 Datasheet - Page 2

• Manufacturer Part Number: BF 799W H6327
• Description: TRANS RF NPN 20V SOT323
• Manufacturer: Infineon Technologies

Specifications of BF 799W H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 800MHz
• Noise Figure (db Typ @ F): 3dB @ 100MHz
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

Electrical Characteristics at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Base-emitter breakdown voltage
I
Collector-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
Base-emitter saturation voltage
I
AC characteristics
Transition frequency
I
I
Output capacitance
V
Collector-base capacitance
V
Collector-emitter capacitance
V
Noise figure
I
Z
Output conductance
I
C
C
E
C
C
C
C
C
C
C
C
S
CB
CB
CB
CE
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 5 mA, V
= 20 mA, V
= 20 mA, I
= 20 mA, I
= 5 mA, V
= 20 mA, V
= 5 mA, V
= 20 mA, V
= 50
= 20 V, I
= 10 V, I
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
B
C
E
CE
CE
CE
B
B
E
E
= 0
CE
CE
CE
= 0
= 0
= 2 mA
= 2 mA
= 0
= 0 mA, f = 1 MHz
= 10 V
= 10 V, f = 100 MHz
= 10 V, f = 100 MHz,
= 10 V
= 8 V, f = 100 MHz
= 10 V, f = 35 MHz
A
= 25 °C, unless otherwise specified.
2
Symbol
V
V
V
I
h
V
V
f
C
C
C
F
g
CBO
T
FE
22e
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
ob
cb
ce
min.
20
30
35
40
3
-
-
-
-
-
-
-
-
-
-
Values
1100
0.96
0.28
100
800
typ.
0.1
0.7
95
60
3
-
-
-
-
-
max.
0.95
250
100
0.3
2007-04-20
-
-
-
-
-
-
-
-
-
-
-
BF799W
Unit
V
nA
-
V
MHz
pF
dB
S