BFR 949L3 E6327 Infineon Technologies, BFR 949L3 E6327 Datasheet

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BFR 949L3 E6327

Manufacturer Part Number
BFR 949L3 E6327
Description
TRANSISTOR RF NPN 10V TSLP-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 949L3 E6327

Package / Case
TSLP-3-1
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1dB ~ 2.5dB @ 1GHz
Gain
21.5dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 6V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR949L3E6327XT
SP000013563
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR949L3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For low noise, high-gain broadband amplifiers at
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
collector currents from 1 mA to 20 mA
T
= 9 GHz, F = 1 dB at 1 GHz
101 °C
thJA
please refer to Application Note Thermal Resistance
2)
3)
Marking
RK
1)
1 = B
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
2 = E
3 = C
-65 ... 150
-65 ... 150
Value
Value
1
250
150
1.5
10
20
20
50
195
5
Package
TSLP-3-1
BFR949L3
2
2007-04-26
3
Unit
V
mA
mW
°C
Unit
K/W

Related parts for BFR 949L3 E6327

BFR 949L3 E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For low noise, high-gain broadband amplifiers at collector currents from GHz GHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Package Outline Top view Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = ...

Page 5

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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