BFR 193W H6327 Infineon Technologies, BFR 193W H6327 Datasheet - Page 3
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BFR 193W H6327
Manufacturer Part Number
BFR 193W H6327
Description
TRANS RF NPN 12V 80MA SOT323
Manufacturer
Infineon Technologies
Datasheet
1.BFR_193W_E6327.pdf
(7 pages)
Specifications of BFR 193W H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
10.5dB ~ 16dB
Power - Max
580mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR193WH6327XT
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
Z
I
Z
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
1
C
C
C
C
C
C
C
G
L
L
CB
CE
EB
ma
= 50 mA, V
= 10 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
Lopt
Lopt
21
/ S
, f = 900 MHz
, f = 1.8 GHz
12
CE
CE
CE
CE
CE
CE
CE
| (k-(k²-1)
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
1/2 )
BE
BE
S
S
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
= 50
= 50
1)
= 25°C, unless otherwise specified
,
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
10.5
13.5
0.74
0.28
typ.
1.8
1.6
16
8
1
8
max.
BFR193W
1
2007-03-30
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB