BFR 460L3 E6327 Infineon Technologies, BFR 460L3 E6327 Datasheet

BFR 460L3 E6327

Manufacturer Part Number

BFR 460L3 E6327

Description

TRANSISTOR RF NPN 4.5V TSLP-3

Manufacturer

Infineon Technologies

Datasheet

1.BFR_460L3_E6327.pdf (7 pages)

Specifications of BFR 460L3 E6327

Package / Case

TSLP-3-1

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

5.8V

Frequency - Transition

22GHz

Noise Figure (db Typ @ F)

1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz

Gain

16dB

Power - Max

200mW

Dc Current Gain (hfe) (min) @ Ic, Vce

90 @ 20mA, 3V

Current - Collector (ic) (max)

50mA

Mounting Type

Surface Mount

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Mounting Style

SMD/SMT

Power Dissipation

200 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BFR460L3E6327XT
SP000014238

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NPN Silicon RF Transistor*

• For low voltage / low current applications

• Ideal for VCO modules and low noise amplifiers

• Low noise figure: 1.1 dB at 1.8 GHz

• SMD leadless package

• Excellent ESD performance

• High f

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR460L3

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Operation junction temperature range

Ambient temperature

Storage temperature

Pb-containing package may be available upon special request

T S is measured on the collector lead at the soldering point to the pcb

typical value 1500V (HBM)

> 0 °C

≤ 0 °C

≤ 108°C

of 22 GHz

Marking

1 = B

Symbol

Pin Configuration

CEO

CES

CBO

EBO

tot

stg

2 = E

3 = C

-65 ... 150

Value

- ... -

200

150

4.5

4.2

1.5

Package

TSLP-3-1

BFR460L3

2008-08-14

Unit

°C

Related parts for BFR 460L3 E6327

BFR 460L3 E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1 1.8 GHz • SMD leadless package • Excellent ESD performance typical value ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Collector-base capacitance 1MHz 0.8 pF 0.6 0.5 0.4 0.3 0.2 0 Power gain ...

Page 5

Power gain parameter in GHz 0.5 1 1 ...

Page 6

Package Outline Top view Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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