BFR 193L3 E6327 Infineon Technologies, BFR 193L3 E6327 Datasheet
BFR 193L3 E6327
Specifications of BFR 193L3 E6327
SP000013557
Related parts for BFR 193L3 E6327
BFR 193L3 E6327 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain amplifiers GHz For linear broadband amplifiers GHz 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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... ITF = 1.1828 V VJC = 1.0037 MJS = 3 XTI = - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit Transistor B’ For examples and ready to use parameters please contact your local Infineon Technologies ...
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Package Outline Top view Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...