BFP520E6327 Infineon Technologies, BFP520E6327 Datasheet - Page 2
![TRANS NPN RF 2.5V SOT-343](/photos/5/32/53227/448-sot-343_sml.jpg)
BFP520E6327
Manufacturer Part Number
BFP520E6327
Description
TRANS NPN RF 2.5V SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BFP520E6327.pdf
(10 pages)
Specifications of BFP520E6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.95dB @ 1.8GHz
Gain
24dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP520
BFP520E6327XT
BFP520INTR
BFP520XTINTR
BFP520XTINTR
SP000012229
BFP520E6327XT
BFP520INTR
BFP520XTINTR
BFP520XTINTR
SP000012229
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFP520E6327
Manufacturer:
NS
Quantity:
8 866
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 0.5 V, I
= 2 V, V
= 10 V, V
= 2 V, I
B
E
BE
= 0
C
= 0
CE
BE
= 0
= 0
thJA
= 2 V, pulse measured
= 0
please refer to Application Note AN077 Thermal Resistance
1)
A
= 25°C, unless otherwise specified
Symbol
R
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
2.5
70
-
-
-
-
Values
Value
110
typ.
100
450
3
1
-
-
max.
1000
3000
2010-08-16
3.5
170
30
30
BFP520
Unit
V
nA
-
Unit
K/W