BFP 520 H6327 Infineon Technologies, BFP 520 H6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 520 H6327
• Description: TRANS RF NPN 2.5V 40MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 520 H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (db Typ @ F): 0.95dB @ 1.8GHz
• Gain: 24dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power gain G
V
Power gain G
I
f = parameter in GHz
C
CE
= 20 mA
dB
dB
= 2 V, I
44
36
32
28
24
20
16
12
32
24
20
16
12
8
4
0
8
4
0
0
0
G
0.5
C
ms
1
= 20 mA
|S21|²
ma
ma
, G
, G
2
1
ms
ms
, |S
=
1.5
3
21
(V
|
2
CE
4
2
=
Gma
)
GHz
(f)
V
0.9
1.8
2.4
3
4
5
6
f
V
CE
6
3
Power gain G
V
f = parameter in GHz
Minimum noise figure NF
V
CE
CE
dB
dB
= 2V
= 2 V, Z
1.5
0.5
32
24
20
16
12
8
4
0
3
2
1
0
0
0
5
5
S
10
ma
= Z
10
, G
15
Sopt
15
ms
20
=
20
25
min
(I
25
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
C
30
2010-08-16
)
=
30
35 mA
BFP520
(I
C
mA
I
)
I
C
C
0.9
1.8
2.4
3
4
5
6
45
40