BFP 420F H6327 Infineon Technologies, BFP 420F H6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 420F H6327
• Description: TRANS RF NPN 4.5V 35MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 420F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 19.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
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E
E
EHA07307
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C
2007-04-20
BFP420F