BFP 620F E7764 Infineon Technologies, BFP 620F E7764 Datasheet
Home Discrete Semiconductor Products RF Transistors (BJT) BFP 620F E7764
Manufacturer Part Number
BFP 620F E7764
Description
TRANSISTOR RF NPN 2.3V TSFP-4
Manufacturer
Infineon Technologies
Specifications of BFP 620F E7764
Package / Case
TSFP-4
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
65GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain
21dB
Power - Max
185mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 50mA, 1.5V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
110 @ 50mA @ 1.5V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
65000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
2.3 V
Emitter- Base Voltage Vebo
1.2 V
Continuous Collector Current
0.08 A
Power Dissipation
185 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP620FE7764XT SP000012989
NPN Silicon Germanium RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620F
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
A
A
S
High gain low noise RF transistor
Small package 1.4 x 0.8 x 0.59 mm
Outstanding noise figure F = 0.7 dB at 1.8 GHz
Maximum stable gain
Gold metallization for extra high reliability
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Outstanding noise figure F = 1.3 dB at 6 GHz
G
G
> 0 °C
ms
ma
0 °C
96°C
= 21 dB at 1.8 GHz
= 10 dB at 6 GHz
Marking
R2s
2)
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
Direction of Unreeling
-65 ... 150
-65 ... 150
-
Value
185
150
4
2.3
2.1
7.5
7.5
1.2
80
Top View
3
3
4
1
XYs
Package
TSFP-4
3
2
2007-04-20
1
BFP620F
2
Unit
V
mA
mW
°C
Related parts for BFP 620F E7764
BFP 620F E7764 Summary of contents
NPN Silicon Germanium RF Transistor* High gain low noise RF transistor Small package 1.4 x 0.8 x 0.59 mm Outstanding noise figure 1.8 GHz Outstanding noise figure GHz Maximum ...
Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 1 GHz C CE Collector-base capacitance MHz ...
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: 0. 1000 V VAF = VAR = 2.707 RBM = 250.7 fF CJE = 1. ...
Total power dissipation P tot 200 mW 160 140 120 100 105 120 ° Permissible Pulse Load totmax totDC ...
Third order Intercept Point IP (Output = parameter, f =1.8GHz CE 30 dBm Power gain ...
Power gain 50mA Parameter in GHz 0.2 0.6 1 1.4 Noise figure ...
Source impedance for min. noise figure vs. frequency V = 1.5V 5.0mA/50.0mA 1.5 0.5 0.4 0.3 0.2 2.4GHz 1.8GHz 3GHz 0.1 0.1 0.2 0.3 0.4 0 4GHz 5GHz −0.1 6GHz −0.2 ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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