BFP620E6327 Infineon Technologies, BFP620E6327 Datasheet - Page 2

• Manufacturer Part Number: BFP620E6327
• Description: TRANS NPN RF 2.3V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP620E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21.5dB
• Power - Max: 185mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: BFP620; BFP620INTR

Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
1
C
C
For calculation of R
T
A
A
S
CE
CE
CB
EB
S
= 1 mA, I
= 50 mA, V
> 0 °C
≤ 0 °C
≤ 95 °C
is measured on the emitter lead at the soldering point to pcb
= 0.5 V, I
= 7.5 V, V
= 5 V, V
= 5 V, I
B
E
BE
= 0
C
= 0
CE
BE
= 0
= 0
thJA
= 1.5 V, pulse measured
= 0
please refer to Application Note AN077 Thermal Resistance
1)
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
J
A
Stg
FE
(BR)CEO
CEO
CES
CBO
EBO
tot
thJS
min.
110
2.3
-
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
0.001
≤ 300
185
150
typ.
180
2.3
2.1
7.5
7.5
1.2
2.8
10
80
1
3
-
max.
2010-09-21
0.04
900
270
10
40
-
BFP620
Unit
V
µA
nA
-
Unit
V
mA
mW
°C
Unit
K/W