BFR 360L3 E6327 Infineon Technologies, BFR 360L3 E6327 Datasheet - Page 2
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BFR 360L3 E6327
Manufacturer Part Number
BFR 360L3 E6327
Description
TRANSISTOR RF NPN 6V TSLP-3
Manufacturer
Infineon Technologies
Datasheet
1.BFR_360L3_E6327.pdf
(9 pages)
Specifications of BFR 360L3 E6327
Package / Case
TSFP-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain
11.5dB ~ 16dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
210 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR360L3E6327XT
SP000013560
SP000013560
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 15 mA, V
= 1 V, I
= 15 V, V
= 5 V, I
B
C
E
= 0
= 0
= 0
CE
BE
= 3 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
90
6
-
-
-
Values
typ.
120
9
-
-
-
max.
100
160
BFR360L3
10
1
2007-03-30
-
Unit
V
µA
nA
µA
-