PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 10
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PBSS4160DPN,115
Manufacturer Part Number
PBSS4160DPN,115
Description
TRANS NPN/PNP 60V LOW SAT SC-74
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4160DPN115.pdf
(18 pages)
Specifications of PBSS4160DPN,115
Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
870mA, 770mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 100mA, 1A / 330mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 5V / 150 @ 500mA, 5V
Power - Max
420mW
Frequency - Transition
220MHz, 185MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
+/- 60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A, - 900 mA
Maximum Dc Collector Current
+/- 2 A
Power Dissipation
290 mW
Maximum Operating Frequency
220 MHz, 185 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4352-2
934058119115
PBSS4160DPN T/R
PBSS4160DPN T/R
934058119115
PBSS4160DPN T/R
PBSS4160DPN T/R
NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 13. TR2 (PNP): DC current gain as a function of
Fig 15. TR2 (PNP): Collector-emitter saturation
V
h
−10
−10
CEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
400
200
−1
−1
−2
−10
−10
0
V
collector current; typical values
voltage as a function of collector current;
typical values
I
−1
−1
C
CE
amb
amb
amb
amb
amb
amb
/I
B
= −5 V
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
= 20
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−10
−10
2
2
−10
−10
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3
I
3
I
C
C
(mA)
(mA)
Rev. 03 — 11 December 2009
−10
−10
4
4
Fig 14. TR2 (PNP): Base-emitter voltage as a function
Fig 16. TR2 (PNP): Collector-emitter saturation
V
V
−10
−10
CEsat
(V)
(V)
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
−1.0
BE
−0.8
−0.6
−0.4
−0.2
60 V, 1 A NPN/PNP low V
−1
−1
−2
−10
−10
V
of collector current; typical values
T
voltage as a function of collector current;
typical values
C
C
C
−1
−1
amb
amb
amb
amb
CE
/I
/I
/I
B
B
B
= −5 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
PBSS4160DPN
−10
−10
2
2
CEsat
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
006aaa476
006aaa490
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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