PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 13. TR2 (PNP): DC current gain as a function of
Fig 15. TR2 (PNP): Collector-emitter saturation
V
h
−10
−10
CEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
400
200
−1
−1
−2
−10
−10
0
V
collector current; typical values
voltage as a function of collector current;
typical values
I
−1
−1
C
CE
amb
amb
amb
amb
amb
amb
/I
B
= −5 V
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
= 20
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−10
−10
2
2
−10
−10
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3
I
3
I
C
C
(mA)
(mA)
Rev. 03 — 11 December 2009
−10
−10
4
4
Fig 14. TR2 (PNP): Base-emitter voltage as a function
Fig 16. TR2 (PNP): Collector-emitter saturation
V
V
−10
−10
CEsat
(V)
(V)
(1) T
(2) T
(3) T
(1) I
(2) I
(3) I
−1.0
BE
−0.8
−0.6
−0.4
−0.2
60 V, 1 A NPN/PNP low V
−1
−1
−2
−10
−10
V
of collector current; typical values
T
voltage as a function of collector current;
typical values
C
C
C
−1
−1
amb
amb
amb
amb
CE
/I
/I
/I
B
B
B
= −5 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
PBSS4160DPN
−10
−10
2
2
CEsat
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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006aaa490
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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