PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 13

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 23. TR2 (PNP): BISS transistor switching time definition
Fig 24. TR2 (PNP): Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
I
C
= −0.5 A; I
oscilloscope
t
d
Bon
t
on
Rev. 03 — 11 December 2009
= −25 mA; I
V
t
I
r
(probe)
450 Ω
Boff
R1
= 25 mA; R1 = open; R2 = 100 Ω; R
R2
R
60 V, 1 A NPN/PNP low V
B
V
BB
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
PBSS4160DPN
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
off
oscilloscope
B
= 300 Ω; R
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
C
= 20 Ω
− I
006aaa266
C
(100 %)
13 of 18
t