PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 2

TRANS NPN/PNP 60V LOW SAT SC-74

PBSS4160DPN,115

Manufacturer Part Number
PBSS4160DPN,115
Description
TRANS NPN/PNP 60V LOW SAT SC-74
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4160DPN,115

Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
870mA, 770mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 100mA, 1A / 330mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 5V / 150 @ 500mA, 5V
Power - Max
420mW
Frequency - Transition
220MHz, 185MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
+/- 60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A, - 900 mA
Maximum Dc Collector Current
+/- 2 A
Power Dissipation
290 mW
Maximum Operating Frequency
220 MHz, 185 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4352-2
934058119115
PBSS4160DPN T/R
PBSS4160DPN T/R
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS4160DPN_3
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PBSS4160DPN
Type number
PBSS4160DPN
Symbol
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
V
V
V
I
I
I
I
C
CM
B
BM
CBO
CEO
EBO
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
Pinning
Ordering information
Marking codes
Limiting values
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Package
Name
SC-74
Rev. 03 — 11 December 2009
Description
plastic surface mounted package; 6 leads
Marking code
B4
Conditions
open emitter
open base
open collector
NPN
PNP
both
single pulse; t
single pulse; t
60 V, 1 A NPN/PNP low V
Simplified outline
p
p
≤ 1 ms
≤ 1 ms
1
6
PBSS4160DPN
[1]
[2]
[1]
[2]
[3]
5
2
-
-
Min
-
-
-
-
-
-
-
-
-
4
3
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
80
60
5
870
1
770
900
1
2
300
1
TR1
6
1
sym019
Version
SOT457
5
2
Unit
V
V
V
mA
A
mA
mA
A
A
mA
A
4
3
TR2
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