PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
6. Thermal characteristics
PBSS4160DPN_3
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0.75
0.33
10
−4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
10
−3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
10
Rev. 03 — 11 December 2009
−2
10
−1
2
O
3
, standard footprint.
60 V, 1 A NPN/PNP low V
Conditions
in free air
1
10
[1]
[2]
[3]
PBSS4160DPN
Min
-
-
-
-
CEsat
10
Typ
-
-
-
-
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
006aaa494
(s)
Max
431
338
278
105
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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