PBSS4160DPN,115 NXP Semiconductors, PBSS4160DPN,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS4160DPN,115
• Description: TRANS NPN/PNP 60V LOW SAT SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 870mA, 770mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
• Power - Max: 420mW
• Frequency - Transition: 220MHz, 185MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A, - 900 mA
• Maximum Dc Collector Current: +/- 2 A
• Power Dissipation: 290 mW
• Maximum Operating Frequency: 220 MHz, 185 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4352-2; 934058119115; PBSS4160DPN T/R; PBSS4160DPN T/R

NXP Semiconductors
7. Characteristics
PBSS4160DPN_3
Product data sheet
Table 7.
T
Symbol
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
I
I
V
V
TR1 (NPN)
h
V
R
t
t
t
t
t
t
f
C
TR2 (PNP)
h
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
FE
BEsat
BEon
CEsat
CEsat
c
= 25
°
C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off current V
base-emitter saturation
voltage
base-emitter turn-on
voltage
DC current gain
collector-emitter saturation
voltage
collector-emitter saturation
resistance
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
DC current gain
Characteristics
Rev. 03 — 11 December 2009
Conditions
V
V
T
V
I
V
V
V
V
I
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
I
V
V
I
V
C
C
C
B
C
C
C
Bon
Boff
C
E
C
CB
CB
j
CE
EB
CE
CE
CE
CE
CE
CB
CE
CE
CE
= 150 °C
= 50 mA
= i
= 1 A; I
= 100 mA; I
= 500 mA;
= 1 A; I
= 1 A; I
= 0.5 A;
= 50 mA;
= −500 mA
60 V, 1 A NPN/PNP low V
= 25 mA;
= −25 mA
= 5 V; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V;
= 10 V;
= −5 V; I
= −5 V;
= −5 V; I
e
= 0 A; f = 1 MHz
B
B
B
= 50 mA
= 100 mA
= 100 mA
C
C
C
C
C
E
E
C
C
= 0 A
= 1 A
= 1 mA
= 500 mA
= 1 A
BE
B
= 0 A
= 0 A;
= −1 mA
= −1 A
= 1 mA
= 0 V
PBSS4160DPN
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
-
-
Min
-
-
-
-
-
-
250
200
100
-
-
-
-
-
-
-
150
-
200
150
100
CEsat
Typ
-
-
-
-
0.95
0.82
500
420
180
90
115
200
200
11
78
90
340
160
500
220
5.5
350
250
160
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
100
50
100
100
1.1
0.9
-
-
-
110
140
250
250
-
-
-
-
-
-
-
10
-
-
-
Unit
nA
μA
nA
nA
V
V
mV
mV
mV
mΩ
ns
ns
ns
ns
ns
ns
MHz
pF
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