FMB5551 Fairchild Semiconductor, FMB5551 Datasheet - Page 3

• Manufacturer Part Number: FMB5551
• Description: TRANSISTOR NPN 160V 600MA SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FMB5551

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 700mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 0.7 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Device #1 FAN2558SX
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
SOPL1
THBT
TMCL1
Device #2 FDC365P
Package:
#Leads:
Precondition Description:
P/C
X
X
X
TTG23
006
TTK23
C06
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A108 NA%RH, 150C
JESD22-A101 85%RH, 85C, 5V 168
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
Conditions
Readpoints
TP1
168
100
TP2
500
500
500
TP3
1000
1000
Read-
points
Read-
points
Samples
A
77
77
77
77
Sample
Sample
A
0
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