MMPQ2222A Fairchild Semiconductor, MMPQ2222A Datasheet - Page 2

• Manufacturer Part Number: MMPQ2222A
• Description: TRANSISTOR NPN 40V 500MA 16-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of MMPQ2222A

• Transistor Type: 4 NPN (Quad)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Transistor Polarity: NPN
• Number Of Elements: 4
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 1W
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: SOIC N
• Configuration: Quad Dual Collector
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MMPQ2222ATR

ON CHARACTERISTICS
OFF CHARACTERISTICS
V
V
V
I
I
t
t
t
t
h
V
V
f
C
C
NF
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Symbol
CBO
EBO
T
d
r
s
f
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
obo
ibo
Electrical Characteristics
*
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Delay Time
Rise Time
Storage Time
Fall Time
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Parameter
T
A
= 25°C unless otherwise noted
NPN Multi-Chip General Purpose Amplifier
I
I
I
V
V
V
I
V
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
V
I
R
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CC
CC
CB
EB
S
= 10 mA, I
= 10 A, I
= 10 A, I
= 150 mA, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 100 A, V
= I
= 1.0 k , f = 1.0 kHz
= 3.0 V, I
= 60 V, I
= 10 V, I
= 0.5 V, I
= 30 V, V
= 30 V, I
Test Conditions
B2
= 15 mA
E
C
B
E
E
C
C
C
CE
CE
BE(OFF)
B1
= 0
= 0
B
B
B
B
CE
CE
CE
= 0, f = 100 kHz
= 150 mA,
= 0
= 0
CE
CE
CE
= 0, f = 100 kHz
= 0
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 20 V,
= 15 mA
= 10 V
= 10 V
= 10 V,
= 10 V*
= 1.0 V*
= 10 V*
= 0.5 V,
Min
100
5.0
40
75
35
50
75
50
40
Typ Max Units
300
180
4.0
2.0
20
40
20
8
300
0.3
1.0
1.2
2.0
10
10
(continued)
MHz
nA
nA
dB
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V