BCM 846S E6327 Infineon Technologies, BCM 846S E6327 Datasheet - Page 2

• Manufacturer Part Number: BCM 846S E6327
• Description: TRANSISTOR ARRAY NPN AF SOT-363
• Manufacturer: Infineon Technologies

Specifications of BCM 846S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 250 MHz
• Collector- Emitter Voltage Vceo Max: 65 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCM846SE6327XT; SP000013958

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage-
I
I
Matching
I
I
1
2
C
C
C
E
C
C
C
C
C
C
C
C
B
B
For calculation of R
Puls test: t < 300µs; D < 2%
CB
CB
= 10 µA, I
= 1 µA, V
= 100 µA, V
= 10 mA, I
= 10 µA, I
= 10 µA, V
= 10 µA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 30 V, I
= 30 V, I
CE1
C
E
CE
CE
B
B
B
E
E
BE
CE
CE
= 0 A
= 0 A
B
B
= 0 A
= 0.5 mA
= 0.5 mA
CE1
= 0 A
= 0 A, T
= 5 V
= 5 V
= 5 mA
= 5 mA
= V
= 0 A
2)
= 5 V
= 5 V
thJA
= V
CE2
please refer to Application Note Thermal Resistance
2)
CE2
A
= 1.0V
= 150 °C
1)
= 1.0V
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
V
V
I
h
V
V
V
CBO
FE
I
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CEsat
BEsat
BE(ON)
thJS
C
min.
200
580
-10
-10
65
80
80
6
-
-
-
-
-
-
-
-
Values
Value
250
290
200
700
900
660
140
typ.
90
-
-
-
-
-
-
-
-
-
0.015
max.
450
300
650
700
770
BCM846S
10
10
2007-04-26
5
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
-
mV
%