MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 122

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MT47H64M8CF-25E IT:G

Manufacturer Part Number
MT47H64M8CF-25E IT:G
Description
64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
Manufacturer
Micron Technology Inc
Figure 73: REFRESH Command-to-Power-Down Entry
Figure 74: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
122
1 t CK
1 x t CK
Power-down 1
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
entry
entry
NOP
NOP
512Mb: x4, x8, x16 DDR2 SDRAM
T2
T2
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
Don’t Care
2004 Micron Technology, Inc. All rights reserved.
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the

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