MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 32

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Table 12: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V
DDQ
Period jitter
Half period
Cycle to cycle
Cumulative error,
2 cycles
Cumulative error,
3 cycles
Cumulative error,
4 cycles
Cumulative error,
5 cycles
Cumulative error,
6–10 cycles
Cumulative error,
11–50 cycles
DQS output access
time from CK/CK#
DQS read pream-
ble
DQS read
postamble
CK/CK# to DQS
Low-Z
= 1.8V ±0.1V, V
Parameter
AC Characteristics
DD
= 1.8V ±0.1V
Symbol
t
t
t
t
t
t
t
ERR
ERR
ERR
ERR
t
DQSCK
t
ERR
t
JITper
JITdty
t
t
ERR
10per
50per
RPRE
RPST
JITcc
t
LZ
2per
3per
4per
5per
11–
1
6–
–132
–157
–175
–188
–250
–425
–300
Min
–90
–75
-187E
180
Max
132
157
175
188
250
425
300
90
75
–100
–100
–150
–175
–200
–200
–300
–450
–350
Min
-25E
200
Max
100
100
150
175
200
200
300
450
350
–100
–100
–150
–175
–200
–200
–300
–450
–350
Min
200
-25
Max
100
100
150
175
200
200
300
450
350
MAX =
MAX = 1.1 ×
MAX = 0.6 ×
MIN =
MIN = 0.9 ×
MIN = 0.4 ×
–125
–125
–175
–225
–250
–250
–350
–450
–400
Min
t
t
-3E
250
AC (MIN)
AC (MAX)
Max
125
125
175
225
250
250
350
450
400
t
t
t
t
CK
CK
CK
CK
–125
–125
–175
–225
–250
–250
–350
–450
–400
Min
250
-3
Max
125
125
175
225
250
250
350
450
400
–125
–125
–175
–225
–250
–250
–350
–450
–450
Min
-37E
250
Max
125
125
175
225
250
250
350
450
450
–125
–150
–175
–225
–250
–250
–350
–450
–500
Min
250
-5E
Max
125
150
175
225
250
250
350
450
500
Units Notes
t
t
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
CK
CK
ps
17, 18,
17, 18,
19, 21,
15, 16
15, 16
19, 20
12
13
14
15
15
15
15
19
19
22