MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 43

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

AC and DC Operating Conditions
Table 13: Recommended DC Operating Conditions (SSTL_18)
All voltages referenced to V
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
Parameter
Supply voltage
V
I/O supply voltage
I/O reference voltage
I/O termination voltage (system)
DDL
supply voltage
Notes:
SS
1. V
2. V
3. V
4. V
5. V
DC level of the same. Peak-to-peak noise (noncommon mode) on V
±1 percent of the DC value. Peak-to-peak AC noise on V
of V
sistors, is expected to be set equal to V
V
DD
SSQ
DDQ
REF
TT
REF
is not applied directly to the device. V
REF(DC)
.
and V
is expected to equal V
= V
tracks with V
SSL
. This measurement is to be taken at the nearest V
Symbol
DDQ
V
= V
V
V
REF(DC)
V
V
DDQ
DDL
DD
TT
must track each other. V
SS
.
DD
; V
0.49 × V
V
DDL
REF(DC)
43
Min
DDQ
1.7
1.7
1.7
tracks with V
/2 of the transmitting device and to track variations in the
- 40
DDQ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DDQ
REF
0.50 × V
DD
512Mb: x4, x8, x16 DDR2 SDRAM
AC and DC Operating Conditions
, and must track variations in the DC level of
V
TT
Nom
.
REF(DC)
must be ≤ V
1.8
1.8
1.8
is a system supply for signal termination re-
DDQ
DD
V
REF
0.51 × V
.
REF(DC)
may not exceed ±2 percent
Max
1.9
1.9
1.9
REF
2004 Micron Technology, Inc. All rights reserved.
bypass capacitor.
+ 40
DDQ
REF
may not exceed
Units
mV
V
V
V
V
Notes
1, 2
2, 3
2, 3
4
5