MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 30

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
5. Definitions for I
6. I
7. The following I
tion devices when operated outside of the range 0°C ≤ T
LOW
HIGH
Stable
Floating
Switching Inputs changing between HIGH and LOW every other clock cycle (once per
Switching Inputs changing between HIGH and LOW every other data transfer (once
When
T
When
T
DD1
C
C
≤ ≤ 0°C
≥ 85°C
, I
DD4R
, and I
I
ed by 2%; and I
I
rated by 2%; I
30%; and I
T
DD2P
DD0
C
V
V
Inputs stable at a HIGH or LOW level
Inputs at V
two clocks) for address and control signals
per clock) for DQ signals, not including masks or strobes
< 85°C and the 2X refresh option is still enabled)
IN
IN
DD
, I
DD
DD7
≤ V
≥ V
and I
DD1
values must be derated (I
conditions:
IL(AC)max
IH(AC)min
require A12 in EMR1 to be enabled during testing.
, I
DD3P(SLOW)
DD6
DD2N
REF
DD2P
must be derated by 80% (I
30
= V
DD6
, I
Electrical Specifications – I
DD2Q
DDQ
must be derated by 20%; I
and I
must be derated by 4%; I
, I
/2
DD3N
DD7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
, I
must be derated by 7%
512Mb: x4, x8, x16 DDR2 SDRAM
DD3P(FAST)
DD
limits increase) on IT-option or on AT-op-
, I
DD4R
DD6
, I
will increase by this amount if
DD3P
C
DD4R
DD4W
≤ 85°C:
slow must be derated by
and I
2004 Micron Technology, Inc. All rights reserved.
, and I
DD5W
DD
DD5W
Parameters
must be derat-
must be de-