MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 33

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 23:
Figure 24:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
WRITE-to-PRECHARGE
Terminating a WRITE Burst
Note:
Note:
COMMAND
COMMAND
COMMAND
t
t
WR@
WR@
ADDRESS
ADDRESS
ADDRESS
DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
DQMs are LOW.
DQM
DQM
t
t
CLK
CK ≥ 15ns
CK < 15ns
DQ
DQ
CLK
DQ
BANK a,
BANK a,
WRITE
WRITE
COL n
COL n
BANK,
WRITE
COL n
D
D
T0
n
n
IN
IN
D
T0
n
IN
TERMINATE
n + 1
n + 1
NOP
NOP
T1
BURST
D
D
IN
IN
T1
t
WR
DON’T CARE
PRECHARGE
(a or all)
COMMAND
BANK
(Address)
33
NOP
T2
(Data)
NEXT
T2
t
WR
PRECHARGE
(a or all)
BANK
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RP
NOP
NOP
256Mb: x16, x32 Mobile SDRAM
T4
t RP
BANK a,
ACTIVE
ROW
NOP
T5
DON’T CARE
BANK a,
ACTIVE
ROW
©2006 Micron Technology, Inc. All rights reserved.
NOP
T6
Operations