MT48LC64M8A2TG-75 IT:C Micron Technology Inc, MT48LC64M8A2TG-75 IT:C Datasheet - Page 54

• Manufacturer Part Number: MT48LC64M8A2TG-75 IT:C
• Description: DRAM Chip SDRAM 512M-Bit 64Mx8 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC64M8A2TG-75 IT:C

• Package: 54TSOP-II
• Density: 512 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 38:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
DQML, DQMU
COMMAND
BA0, BA1
A11, A12
A0–A9,
DQM/
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
READ – Without Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
NOP
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
T2
BANK
READ
t CH
t CMH
CAS Latency
T3
NOP
t LZ
t AC
54
T4
NOP
D
OUT
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
m + 1
t OH
t AC
SINGLE BANK
PRECHARGE
ALL BANKS
D
BANK
T6
512Mb: x4, x8, x16 SDRAM
OUT
t OH
m + 2
t RP
t AC
©2000 Micron Technology, Inc. All rights reserved.
D
T7
NOP
OUT
t OH
m + 3
Timing Diagrams
t HZ
ROW
BANK
T8
ROW
ACTIVE
Don’t Care
Undefined