MT48LC64M8A2TG-75 IT:C Micron Technology Inc, MT48LC64M8A2TG-75 IT:C Datasheet - Page 55

DRAM Chip SDRAM 512M-Bit 64Mx8 3.3V 54-Pin TSOP-II Tray

MT48LC64M8A2TG-75 IT:C

Manufacturer Part Number
MT48LC64M8A2TG-75 IT:C
Description
DRAM Chip SDRAM 512M-Bit 64Mx8 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC64M8A2TG-75 IT:C

Package
54TSOP-II
Density
512 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
6|5.4 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (64M x 8)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 39:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
DQML, DQMU
COMMAND
A11, A12
BA0, BA1
A0–A9,
DQM/
CLK
CKE
A10
DQ
t CKS
t CMS
t AS
t AS
t AS
READ – With Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
1. For this example, BL = 4, and CL = 2.
2. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
NOP
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
BANK
T2
READ
t CMH
t CH
CAS Latency
T3
NOP
t LZ
t AC
55
T4
NOP
D
OUT
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
m + 1
t OH
t AC
t
D
T6
OUT
512Mb: x4, x8, x16 SDRAM
NOP
m + 2
t OH
t AC
t RP
©2000 Micron Technology, Inc. All rights reserved.
D
T7
NOP
OUT
Timing Diagrams
m + 3
t OH
t HZ
T8
BANK
ACTIVE
ROW
ROW
Don’t Care
Undefined

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