MMBT2222A Fairchild Semiconductor, MMBT2222A Datasheet - Page 2
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MMBT2222A
Manufacturer Part Number
MMBT2222A
Description
TRANSISTOR GP NPN AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT2222A.pdf
(5 pages)
Specifications of MMBT2222A
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT2222AFSTR
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PN2222A / MMBT2222A / PZT2222A Rev. A3
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
BV
BV
BV
Symbol
V
V
Re(h
rb’C
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
C
h
CBO
CEX
EBO
NF
I
BL
f
t
obo
t
FE
t
t
ibo
T
d
s
r
f
ie
c
)
Collector-Emitter Breakdown Voltage * I
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
T
a
= 25°C unless otherwise noted
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
R
I
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CB
CB
EB
CE
CB
EB
CC
CC
S
= 10mA, I
= 10μA, I
= 10μA, I
= 0.1mA, V
= 1.0mA, V
= 10mA, V
= 10mA, V
= 150mA, V
= 150mA, V
= 500mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 20mA, V
= 100μA, V
= 20mA, V
= 150mA, I
= 1.0KΩ, f = 1.0KHz
= I
2
= 3.0V, I
= 0.5V, I
= 60V, V
= 60V, I
= 60V, I
= 60V, V
= 10V, I
= 30V, V
= 30V, I
B2
= 15mA
Test Condition
C
E
B
E
E
E
C
C
C
EB(off)
EB(off)
CE
CE
CE
CB
CE
EB(off)
= 0
= 0
B
B
B
B
B1
CE
CE
CE
= 0
= 0
= 0, T
= 0, f = 1MHz
CE
CE
CE
= 150mA,
= 0
= 0, f = 1MHz
= 15mA
= 50mA
= 15mA
= 50mA
= 10V
= 10V, T
= 20V, f = 100MHz
= 20V, f = 31.8MHz
= 20V, f = 300MHz
= 15mA
= 10V
= 10V
= 10V,
= 10V *
= 1V *
= 10V *
= 3.0V
= 3.0V
= 0.5V,
a
= 125°C
a
= -55°C
Min.
100
300
6.0
0.6
40
75
35
50
75
35
50
40
Max.
0.01
300
150
225
0.3
1.0
1.2
2.0
8.0
4.0
10
10
10
20
25
60
10
25
60
www.fairchildsemi.com
Units
MHz
nA
μA
μA
nA
nA
pF
pF
pS
dB
ns
ns
ns
ns
V
V
V
V
V
V
V
Ω