MMBTA92 Fairchild Semiconductor, MMBTA92 Datasheet - Page 3

• Manufacturer Part Number: MMBTA92
• Description: TRANSISTOR HIVOLT PNP AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA92

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA92FSTR

Typical Characteristics
100
80
60
40
20
100
0.1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
1
1
1
25
V
1
CE
Voltage vs Collector Current
V
= 50V
Gain Bandwidth Product
C B
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
= 150V
I
vs Collector Current
I
T - AMBIENT TE MPERATURE ( C)
C
50
C
A
- COLLECTOR CURRENT (mA)
- COLLE CTOR CURRENT ( mA)
V
CE
- 40 ° C
= 15V
75
25 °C
10
10
100
20
125 °C
(continued)
125
°
50
= 10
150
100
100
0.75
0.25
0.8
0.6
0.4
0.2
0.1
10
0.5
1
1
1
0
0.1
1
0
f = 1.0 MHz
SOT-23
Base-Emitter ON Voltage vs
TO-92
vs Reverse Bias Voltage
Junction Capacitance
25
PNP High Voltage Amplifier
I
Ambient Temperature
Power Dissipation vs
C
Collector Current
V
- COLLECTOR CURRENT (mA)
- 40 ° C
R
- REVERSE VOLTAGE (V)
TEMPERATURE ( C)
1
50
25 °C
SOT-223
10
75
125 °C
10
100
o
C
ib
V
CE
125
= 5V
C
(continued)
ob
100
100
150