ISPGDX160VA-3B208 LATTICE SEMICONDUCTOR, ISPGDX160VA-3B208 Datasheet - Page 17

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ISPGDX160VA-3B208

Manufacturer Part Number
ISPGDX160VA-3B208
Description
Digital Crosspoint 208-Pin FBGA
Manufacturer
LATTICE SEMICONDUCTOR
Datasheet

Specifications of ISPGDX160VA-3B208

Package
208FBGA
Number Of Arrays
1
Power Supply Type
Dual
Maximum Dual Supply Voltage
3.6 V
Minimum Dual Supply Voltage
2.3|3 V
Output Level
TTL

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Supply Voltage V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
C
C
Absolute Maximum Ratings
DC Recommended Operating Conditions
V
V
V
1. Typical 100mV of input hysteresis.
Capacitance (T
Erase/Reprogram Specifications
Erase/Reprogram Cycles
1
2
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
CC
IL
IH
SYMBOL
1
1
SYMBOL
I/O Capacitance
Dedicated Clock Capacitance
cc
................................. -0.5 to +5.4V
A
Supply Voltage
Input Low Voltage
Input High Voltage
PARAMETER
=25
J
) with Power Applied ... 150°C
o
C, f=1.0 MHz)
PARAMETER
1,2
PARAMETER
Commercial
Industrial
16
Specifications ispGDX160V
T
T
MINIMUM
A
A
10,000
= 0°C to +70°C
= -40°C to +85°C
TYPICAL
10
8
UNITS
MAXIMUM
pf
pf
MIN.
-0.3
3.0
3.0
2.0
V = 3.3V, V
V = 3.3V, V = 2.0V
CC
CC
TEST CONDITIONS
MAX.
5.25
3.6
3.6
0.8
I/O
Y
UNITS
Cycles
Table 2-0005/gdxv
= 2.0V
Table 2 - 0006
UNITS
V
V
V
V

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