BC516 Fairchild Semiconductor, BC516 Datasheet

TRANS PNP DARL 30V 1A TO-92

BC516

Manufacturer Part Number
BC516
Description
TRANS PNP DARL 30V 1A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BC516

Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30000 @ 20mA, 2V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
10V
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Collector Current (dc) (max)
1A
Dc Current Gain
30000@20mA@2V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
1 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
1 A
Dc Collector/base Gain Hfe Min
30000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant

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©2002 Fairchild Semiconductor Corporation
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
• Sourced from process 61.
Absolute Maximum Ratings
Electrical Characteristics
NOTES:
1. Pulse Test Pulse Width
2. f
Thermal Characteristics
V
V
V
I
P
T
V
V
V
I
h
V
V
f
R
R
C
CBO
T
Symbol
current gain at currents to 1mA.
FE
J
CEO
CBO
EBO
D
CEO
CBO
EBO
CE
BE
T
Symbol
, T
JA
JC
= Ih
Symbol
(sat)
(on)
STG
fe
I · f
test
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product (2)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating and Storage Junction Temperature Range
2%
Parameter
T
A
T
Parameter
=25 C unless otherwise noted
A
=25 C unless otherwise noted
T
A
=25 C unless otherwise noted
- Continuous
T
Parameter
A
= 25 C
I
I
I
V
I
I
I
I
BC516
C
C
E
C
C
C
C
CB
= 10 A, I
= 10mA, V
= 2mA, I
= 100 A, I
= 20mA, V
= 100mA, I
= 10mA, V
= 30V, I
Test Condition
B
C
E
= 0
E
CE
CE
CE
= 0
B
= 0
= 0
= 0.1mA
= 5V, f = 100MHz
= 2V
= 5V
-55 ~ +150
1. Collector 2. Base 3. Emitter
Value
1
625
30
40
10
1
30,00
Min.
30
40
10
0
Max.
83.3
200
Typ.
200
TO-92
Max.
100
1.4
1
Units
Rev. A1, August 2002
mW
Units
V
V
V
A
C/W
C/W
C
Units
MH
nA
V
V
V
V
V
Z

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BC516 Summary of contents

Page 1

... Current Gain Bandwidth Product (2) T NOTES: 1. Pulse Test Pulse Width · test Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2002 Fairchild Semiconductor Corporation BC516 T =25 C unless otherwise noted A Parameter - Continuous =25 C unless otherwise noted A Test Condition I = 2mA 100 A, I ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, August 2002 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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