KSC5338D Fairchild Semiconductor, KSC5338D Datasheet - Page 2

• Manufacturer Part Number: KSC5338D
• Description: TRANSISTOR NPN 450V 5A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of KSC5338D

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 11MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 11 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
Electrical Characteristics
V
Symbol
V
V
CE(DSAT)
BV
BV
BV
CE
BE
I
I
I
I
h
C
CBO
CEO
CES
EBO
C
V
f
t
CBO
CEO
FE
EBO
(sat)
(sat)
ob
T
fr
ib
F
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage I
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
Diode Forward Recovery Time
(di/dt=10A/µs)
Dynamic Saturation Voltage
Parameter
T
a
=25°C unless otherwise noted
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
V
V
I
I
I
I
I
I
I
I
V
I
V
I
V
I
V
C
C
E
C
C
C
C
C
C
C
F
E
F
F
F
F
C
C
C
C
CB
CES
CE
EB
CE
CE
CE
EB
CB
CC
CC
CC
CC
=1A, I
=2A
=0.4A
=1A
=2A
=1mA, I
=5mA, I
=1mA, I
=0.8A, I
=2A, I
=0.8A, I
=1A, I
=0.8A, I
=2A, I
=0.5A,V
=0
=1A, I
=1A, I
=2A, I
=2A, I
=800V, I
=10V, I
=10V, I
=450V, I
=1V, I
=1V, I
=2.5V, I
=10V, I
=300V at 1 µs
=300V at 3 µs
=300V at 1 µs
=300V at 3 µs
=1000V, I
2
Test Condition
B1
B1
B1
B1
C
B
B
B
=1mA,
=0.4A
=0.2A
=0.4A
C
=100mA
=100mA
=400mA
=400mA
E
B
C
C
B
B
B
CE
C
C
=0
=0
=0
=0.08A T
=0.04A T
=0.08A T
E
=0.8A
=2A
E
C
B
=0
=0.5A, f=1MHz
=0, f=1MHz
=0
=10V
=1A
=0
EB
=0 T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
a
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
Min.
1000
450
12
15
10
18
14
6
4
Typ.
0.35
0.55
0.47
0.22
0.65
0.86
0.79
0.95
0.88
550
460
360
325
0.9
0.9
1.8
0.3
0.8
0.9
0.8
2.9
1.9
8.5
25
14
25
18
60
15
17
11
9
6
8
8
9
Max.
0.75
0.75
100
500
100
500
750
100
0.5
1.1
1.5
2.5
0.5
0.6
1.0
0.9
1.0
0.9
1.3
1.5
10
10
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Units
MHz
µA
µA
µA
µA
µA
µA
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V