MMBT2907ALT1 Infineon Technologies, MMBT2907ALT1 Datasheet

TRANSISTOR SWITCHING PNP SOT-23

MMBT2907ALT1

Manufacturer Part Number
MMBT2907ALT1
Description
TRANSISTOR SWITCHING PNP SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of MMBT2907ALT1

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
330mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
MMBT2907ALT1INTR
MMBT2907ALT1XT
MMBT2907ALT1XTINTR
MMBT2907ALT1XTINTR
SP000011179

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PNP Silicon Switching Transistor
Type
SMBT2907A/MMBT2907A s2F
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Peak base current
Total power dissipation
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
Low collector-emitter saturation voltage
Complementary type:
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBT2222A / MMBT2222A (NPN)
77 °C
thJA
please refer to Application Note Thermal Resistance
2)
Marking
1)
1 = B
1
Pin Configuration
Symbol
V
V
V
I
I
I
P
T
T
Symbol
R
C
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
2 = E
SMBT2907A/MMBT2907A
3 = C
3
-65 ... 150
Value
Value
600
100
200
330
150
60
60
220
5
Package
SOT23
2007-04-26
1
Unit
V
mA
mW
°C
Unit
K/W
2

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MMBT2907ALT1 Summary of contents

Page 1

PNP Silicon Switching Transistor Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type SMBT2907A/MMBT2907A s2F Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Peak base ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 4

Test circuit Delay and rise time Input < 2ns r 0 -16 V 200 ns Storage and fall time Input < -30 V 200 ns Oscillograph: ...

Page 5

DC current gain SMBT 2907 150 ˚C 25 ˚ -50 ˚ Transition frequency f = ...

Page 6

Collector-base capacitance 1MHz SMBT 2907 Permissible Pulse Load totmax totDC p SMBT 2907 ...

Page 7

Storage time stg C SMBT 2907 stg Fall time t EHP00752 10 ns ...

Page 8

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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