FJPF13009TU Fairchild Semiconductor, FJPF13009TU Datasheet - Page 2

• Manufacturer Part Number: FJPF13009TU
• Description: TRANSISTOR NPN 400V 12A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FJPF13009TU

• Transistor Type: NPN
• Current - Collector (ic) (max): 12A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 3A, 12A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5A, 5V
• Power - Max: 50W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 12 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 12 A
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 4 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2007 Fairchild Semiconductor Corporation
FJPF13009 Rev. B
Electrical Characteristics
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Package Marking and Ordering Information
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Affix “-T” means the TO220F Potting type package option.
3) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Device Item
FJPF13009TU
FJPF13009TTU
FJPF13009H2TU
V
I
h
V
V
C
f
t
t
t
EBO
T
ON
STG
F
Symbol
FE
CEO
CE
BE
ob
(sat)
(sat)
(sus)
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
(notes_2)
Parameter
Device Marking
J13009
J13009
J130092
T
C
= 25°C unless otherwise noted
I
V
V
V
I
I
I
I
I
V
V
V
I
Package
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
TO-220F
TO-220F
TO-220F
= 10mA, I
= 5A, I
= 8A, I
= 12A, I
= 5A, I
= 8A, I
= - I
= 9V, I
= 5V, I
= 5V, I
= 10V, f = 0.1MHz
= 10V, I
= 125V, I
2
B2
Conditions
B
B
B
B
B
= 1.6A, R
C
= 1A
= 1.6A
= 1A
= 1.6A
C
C
= 3A
B
C
= 0
= 5A (h
= 8A
C
= 0
= 0.5A
= 8A
FE1
L
= 15,6Ω
Packing Method
)
TUBE
TUBE
TUBE
Min.
400
8
6
4
Typ.
180
Max
Potting Type
Remarks
1.5
1.2
1.6
1.1
0.7
40
30
1
1
3
3
www.fairchildsemi.com
Units
MHz
mA
pF
µs
µs
µs
V
V
V
V
V
V