MMBT5087 Fairchild Semiconductor, MMBT5087 Datasheet - Page 3

• Manufacturer Part Number: MMBT5087
• Description: TRANSISTOR GP PNP AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5087

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 10nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 350mW
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: - 3 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 40 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 250
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT5087TR

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
0.8
0.6
0.4
0.2
0.01
350
300
250
200
150
100
100
0.1
50
1
0
10
0.1
0.01 0.03
1
25
Figure 3. Base-Emitter Saturation Voltage
Figure 1. Typical Pulsed Current Gain
- 40 °C
125 °C
V
25 °C
Figure 5. Collector Cutoff Current
CB
- 40 °C
= 40V
I - COLLECTOR CURRENT (mA)
T - AMBIENT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (mA)
vs Ambient Temperature
C
C
A
0.1
vs Collector Current
vs Collector Current
50
25 °C
0.3
1
75
1
125 °C
3
10
100
10
V
°
CB
30
= 10
= 5V
100
125
50
20
16
12
0.8
0.6
0.4
0.2
8
4
0
0.25
0.15
0.05
Figure 2. Collector-Emitter Saturation Voltage
1
0
0
0.3
0.2
0.1
0.1
0
0.1
Figure 6. Input and Output Capacitance
- 40 °C
Figure 4. Base-Emitter On Voltage
I - COLLECTOR CURRE NT (mA)
4
C
REVERSE BIAS VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
= 10
C
vs Collector Current
vs Collector Current
125 ° C
vs Reverse Voltag
25 °C
C ibo
8
1
1
125 °C
12
- 40 ° C
25 ° C
V
10
f = 1 MHz
CE
C obo
16
= 5V
Rev. B1, September 2003
10
25
20