MMBT5087 Fairchild Semiconductor, MMBT5087 Datasheet - Page 3
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MMBT5087
Manufacturer Part Number
MMBT5087
Description
TRANSISTOR GP PNP AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5087.pdf
(9 pages)
Specifications of MMBT5087
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (max)
10nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
350mW
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
- 3 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
350 mW
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
50V
Emitter-base Voltage
3V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
250
Frequency (max)
40MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5087TR
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©2003 Fairchild Semiconductor Corporation
Typical Characteristics
0.8
0.6
0.4
0.2
0.01
350
300
250
200
150
100
100
0.1
50
1
0
10
0.1
0.01 0.03
1
25
Figure 3. Base-Emitter Saturation Voltage
Figure 1. Typical Pulsed Current Gain
- 40 °C
125 °C
V
25 °C
Figure 5. Collector Cutoff Current
CB
- 40 °C
= 40V
I - COLLECTOR CURRENT (mA)
T - AMBIENT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (mA)
vs Ambient Temperature
C
C
A
0.1
vs Collector Current
vs Collector Current
50
25 °C
0.3
1
75
1
125 °C
3
10
100
10
V
°
CB
30
= 10
= 5V
100
125
50
20
16
12
0.8
0.6
0.4
0.2
8
4
0
0.25
0.15
0.05
Figure 2. Collector-Emitter Saturation Voltage
1
0
0
0.3
0.2
0.1
0.1
0
0.1
Figure 6. Input and Output Capacitance
- 40 °C
Figure 4. Base-Emitter On Voltage
I - COLLECTOR CURRE NT (mA)
4
C
REVERSE BIAS VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
= 10
C
vs Collector Current
vs Collector Current
125 ° C
vs Reverse Voltag
25 °C
C ibo
8
1
1
125 °C
12
- 40 ° C
25 ° C
V
10
f = 1 MHz
CE
C obo
16
= 5V
Rev. B1, September 2003
10
25
20