MMBT3906 Fairchild Semiconductor, MMBT3906 Datasheet
MMBT3906
Specifications of MMBT3906
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MMBT3906 Summary of contents
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... SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3906 625 5.0 83.3 200 PZT3906 SOT-223 Value Units -40 V -40 V -5.0 V -200 mA -55 to +150 C Max Units *MMBT3906 **PZT3906 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3906/MMBT3906/PZT3906, Rev A1 ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS h DC Current Gain * FE V ...
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Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...
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Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...
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Typical Characteristics Voltage Feedback Ratio 100 COLLECTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued 0.1 0 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...